PV01300 - SEMI PV13 - Test Method for Contactless Excess-Charge-Carrier Recombination Lifetime Measurement in Silicon Wafers, Ingots, and Bricks Using an Eddy-Current Sensor StdPbc-0721 本スタンダードでは，各用語について定義し，それを解釈することで，

本スタンダードでは，各用語について定義し，それを解釈することで，

SEMI MF950-1107 (Reapproved 0718)

Initially available in January 2000

貯蔵 （§11）

PV01300 - SEMI PV13 - Test Method for Contactless Excess-Charge-Carrier Recombination Lifetime Measurement in Silicon Wafers, Ingots, and Bricks Using an Eddy-Current Sensor StdPbc-0721 本スタンダードでは，各用語について定義し，それを解釈することで，The excess charge carrier (hereafter referred to as excess carrier) recombination lifetime is the central parameter to silicon solar cell device design, production, and process control. The measurement of this lifetime as it depends on excess carrier density yields physically significant results, which allows for design optimization and efficiency prediction in solar cells. The Test Method also describes how this recombination lifetime can be further